2

-SiC

Year:
1982
Language:
english
File:
PDF, 659 KB
english, 1982
4

Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependence

Year:
1980
Language:
english
File:
PDF, 621 KB
english, 1980
5

and

Year:
1981
Language:
english
File:
PDF, 898 KB
english, 1981
6

-type GaAs

Year:
1981
Language:
english
File:
PDF, 1.13 MB
english, 1981
7

Properties of radiative recombinations in HgTe-CdTe heterostructures

Year:
1986
Language:
english
File:
PDF, 266 KB
english, 1986
8

strained-layer superlattices

Year:
1988
Language:
english
File:
PDF, 480 KB
english, 1988
9

Te determined with films grown by molecular-beam epitaxy

Year:
1986
Language:
english
File:
PDF, 450 KB
english, 1986
10

Chemistry at the Al- and Au-ZnSe(100) interfaces

Year:
1995
Language:
english
File:
PDF, 299 KB
english, 1995
11

Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependence

Year:
1980
Language:
english
File:
PDF, 935 KB
english, 1980
13

strained-layer superlattices

Year:
1988
Language:
english
File:
PDF, 572 KB
english, 1988
14

-SiC

Year:
1982
Language:
english
File:
PDF, 430 KB
english, 1982
15

Absolute cross section of first-order Raman scattering in GaAs

Year:
1979
Language:
english
File:
PDF, 203 KB
english, 1979
17

thin films

Year:
1985
Language:
english
File:
PDF, 373 KB
english, 1985
18

, and

Year:
1985
Language:
english
File:
PDF, 580 KB
english, 1985
19

and AgGa

Year:
1980
Language:
english
File:
PDF, 551 KB
english, 1980
20

-SiC

Year:
1982
Language:
english
File:
PDF, 875 KB
english, 1982
21

-ZnSe heterojunctions

Year:
1989
Language:
english
File:
PDF, 471 KB
english, 1989
22

-GaAs

Year:
1980
Language:
english
File:
PDF, 438 KB
english, 1980
23

Optical transitions in ultra-high-purity zinc selenide

Year:
1989
Language:
english
File:
PDF, 222 KB
english, 1989
25

Spectroscopy of bound and free holes in p-type ZnSe layers

Year:
1992
Language:
english
File:
PDF, 333 KB
english, 1992
30

Luminescence above the gap in heavily Zn-doped GaAs

Year:
1979
Language:
english
File:
PDF, 384 KB
english, 1979
31

Raman scattering by two LO-phonons near Γ in GaAs

Year:
1981
Language:
english
File:
PDF, 440 KB
english, 1981
32

Resonant inelastic light scattering by free electrons in InP

Year:
1983
Language:
english
File:
PDF, 318 KB
english, 1983
34

The microscope structures of amorphous phosphorus

Year:
1985
Language:
english
File:
PDF, 279 KB
english, 1985
36

Optical characterization of ultra-high-purity Zinc Selenide epilayers

Year:
1990
Language:
english
File:
PDF, 382 KB
english, 1990
40

Effects of ZnSe epitaxial growth on the surface properties of GaAs

Year:
1987
Language:
english
File:
PDF, 718 KB
english, 1987
42

Quantization of photoexcited electrons in GaAs nipi crystals

Year:
1982
Language:
english
File:
PDF, 74 KB
english, 1982
45

Phonon coupling to excitations of free and localized electrons in n -type ZnSe

Year:
1990
Language:
english
File:
PDF, 342 KB
english, 1990